Английская Википедия:Advanced silicon etching

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Шаблон:Multiple issues Advanced silicon etching (ASE) is a deep reactive-ion etching (DRIE) technique to etch deep and high aspect ratio structures in silicon. ASE was created by Surface Technology Systems Plc (STS) in 1994 in the UK. STS has continued to develop this process with faster etch rates. STS developed and first implemented the switched process, originally invented by Dr. Larmer in Bosch, Stuttgart. ASE consists in combining the faster etch rates achieved in an isotropic Si etch (usually making use of an SF₆ plasma) with a deposition or passivation process (usually utilising a C₄F₈ plasma condensation process) by alternating the two process steps. This approach achieves the fastest etch rates while maintaining the ability to etch anisotropically, typically vertically in Microelectromechanical Systems (microelectromechanical systems (MEMS)) applications.

The ASE HRM represents a significant advancement over preceding generations of ICP design, integrating a decoupled plasma source (patent pending). This innovative decoupled source is responsible for generating a high-density plasma, which is then allowed to diffuse into a dedicated process chamber. The design of this specialized chamber effectively mitigates the presence of excess ions, known for their adverse impact on process control. Consequently, this results in the creation of a uniform distribution of fluorine free-radicals at a notably higher density compared to conventional ICP sources.

The elevated density of fluorine free-radicals plays a pivotal role in enhancing etch rates, surpassing those achieved with the original process by a factor of over three times. This technological improvement underscores the heightened efficiency and performance capabilities of the ASE HRM in comparison to its predecessors.

References

• Шаблон:Citation.

Further reading

• Surface Technology Systems