Английская Википедия:1 µm process
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Шаблон:Short description Шаблон:Use dmy dates Шаблон:More citations needed Шаблон:Semiconductor manufacturing processes The 1 μm process (1 micrometre process) is a level of MOSFET semiconductor process technology that was commercialized around the 1984–1986 timeframe,[1][2] by leading semiconductor companies like NTT, NEC, Intel and IBM. It was the first process where CMOS was common (as opposed to NMOS).
The earliest MOSFET with a 1Шаблон:Nbspμm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.[3]
Products featuring 1.0 μm manufacturing process
- NTT introduced the 1Шаблон:Nbspμm process for its DRAM memory chips, including its 64kШаблон:Nbspin 1979 and 256kШаблон:Nbspin 1980.[4]
- NEC's 1Шаблон:NbspMbit DRAM memory chip was manufactured with the 1Шаблон:Nbspμm process in 1984.[5]
- Intel 80386 CPU launched in 1985 was manufactured using this process.[1]
- Intel uses this process on the CHMOS III-E technology.[6]
- Intel uses this process on the CHMOS IV technology.[7]
References
- ↑ 1,0 1,1 Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite journal
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ Intel Corporation, "New Product Focus: Components: Two-and Four-Megabit EPROMs are High-Density Performers", Microcomputer Solutions, September/October 1989, page 14
- ↑ Intel Corporation, "New Product Focus: Components: New ASSP Suits Mobile Applications", Microcomputer Solutions, September/October 1990, page 11
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