Английская Википедия:Bernard S. Meyerson

Материал из Онлайн справочника
Версия от 09:03, 8 февраля 2024; EducationBot (обсуждение | вклад) (Новая страница: «{{Английская Википедия/Панель перехода}} {{Use mdy dates|date=November 2023}} {{Infobox person | name = Bernard S. Meyerson | image = Bernard S. Meyerson (born 1954).png | caption = In the World Economic Forum video ''Launch of the Top 10 Emerging Tech of 2021'' | birth_date = {{Birth date and age|1954|06|02}} | birth_place = New York, New York | death...»)
(разн.) ← Предыдущая версия | Текущая версия (разн.) | Следующая версия → (разн.)
Перейти к навигацииПерейти к поиску

Шаблон:Use mdy dates Шаблон:Infobox person

Bernard S. Meyerson (born June 2, 1954) is an American solid state physicist.

Biography

Meyerson is a native of New York City, born on June 2, 1954.[1] After graduating from the City College of New York,[2] he completed a master's degree and doctorate at the City University of New York, and began working for IBM.[1][2]

Meyerson was elected a fellow of the American Physical Society in 1998, "for the invention of ultra-high vacuum chemical vapor deposition and its application to low temperature silicon epitaxy, especially the fabrication of SiGe heterojunction bipolar integrated circuits for wireless telecommunications."[3] The APS awarded him the George E. Pake Prize in 2011.[2] Meyerson received the J. J. Ebers Award in 2000 from the IEEE Electron Devices Society.[4] In 2002, Meyerson became an elected member of the National Academy of Engineering.[5]

References

Шаблон:Reflist

Шаблон:Authority control