Английская Википедия:Gallium(II) sulfide
Gallium(II) sulfide, GaS, is a chemical compound of gallium and sulfur. The normal form of gallium(II) sulfide as made from the elements has a hexagonal layer structure containing Ga24+ units which have a Ga-Ga distance of 248pm.[1] This layer structure is similar to GaTe, GaSe and InSe.[1] An unusual metastable form, with a distorted wurtzite structure has been reported as being produced using MOCVD. The metal organic precursors were di-tert-butyl gallium dithiocarbamates, for example GatBu2(S2CNMe2) and this was deposited onto GaAs. The structure of the GaS produced in this way is presumably Ga2+ S2−.[2]
Single layers of gallium sulfide are dynamically stable two-dimensional semiconductors, in which the valence band has an inverted Mexican-hat shape, leading to a Lifshitz transition as the hole-doping is increased.[3]
References
Шаблон:Gallium compounds Шаблон:Sulfides
Шаблон:Inorganic-compound-stub
- ↑ 1,0 1,1 Шаблон:Greenwood&Earnshaw
- ↑ MOCVD Growth of Gallium Sulfide Using Di-tert-butyl Gallium Dithiocarbamate Precursors: Formation of a Metastable Phase of GaS A. Keys, S G. Bott, A. R. Barron Chem. Mater., 11 (12), 3578 -3587, 1999. Шаблон:Doi
- ↑ Шаблон:Cite journal
