Английская Википедия:Gallium indium arsenide antimonide phosphide
Шаблон:Short description Gallium indium arsenide antimonide phosphide (Шаблон:Chem2 or GaInPAsSb) is a semiconductor material.
Research has shown that GaInAsSbP can be used in the manufacture of mid-infrared light-emitting diodes[1][2] and thermophotovoltaic cells.[3]
GaInAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials. The exact composition can be tuned in order to make it lattice matched. The presence of five elements in the alloy allows extra degrees of freedom, making it possible to fix the lattice constant while varying the bandgap. E.g. Ga0.92In0.08P0.05As0.08Sb0.87 is lattice matched to InAs.[2]
See also
- Aluminium gallium phosphide
- Aluminium gallium indium phosphide
- Indium gallium arsenide phosphide
- Indium arsenide antimonide phosphide
- Indium gallium arsenide antimonide
References
- ↑ Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes, A. Krier, V. M. Smirnov, P. J. Batty, V. I. Vasil’ev, G. S. Gagis, and V. I. Kuchinskii, Appl. Phys. Lett. vol. 90 pp. 211115 (2007) Шаблон:Doi
- ↑ 2,0 2,1 Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics, M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov and E. A. Kognovitskaya, Semiconductors vol. 36 num. 8 pp. 944-949 (2002) Шаблон:Doi
- ↑ Low Bandgap GaInAsSbP Pentanary Thermophotovoltaic Diodes, K. J. Cheetham, P. J. Carrington, N. B. Cook and A. Krier, Solar Energy Materials and Solar Cells, vol. 95 pp. 534-537 (2011) Шаблон:Doi
Шаблон:Gallium compounds Шаблон:Indium compounds Шаблон:Antimony compounds Шаблон:Arsenic compounds Шаблон:Arsenides Шаблон:Phosphorus compounds Шаблон:Phosphides
