Английская Википедия:B. Jayant Baliga

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Шаблон:Short description Шаблон:Use dmy dates Шаблон:Use Indian English Bantval Jayant Baliga (born Шаблон:Birth date in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT).

In 1993, Baliga was elected as a member into the National Academy of Engineering for contributions to power semiconductor devices leading to the advent of smart power technology.

Career

Baliga grew up in Jalahalli, a small village near Bangalore, India. His father, Bantwal Vittal Manjunath Baliga, was one of India's first electrical engineers in the days before independence and founding President of the Indian branch of the Institute of Radio Engineers, which later became the IEEE in India. Baliga's father played pivotal roles in the founding of Indian television and electronics industries.

Jayant received his B.Tech in Electrical Engineering from the Indian Institute of Technology, Madras, in 1969, and his MS (1971) and PhD (1974) in Electrical Engineering from the Rensselaer Polytechnic Institute.

He worked 15 years at the General Electric Research and Development Center in Schenectady, New York, then joined North Carolina State University in 1988 as a Full Professor. He was promoted to Distinguished University Professor in 1997. His invention insulated gate bipolar transistor that combines sciences from two streams Electronics engineering and Electrical engineering. This has resulted in cost savings of over $15 trillion for consumers, and is forming a basis for smart grid. Baliga then worked in academic field. He also founded three companies that made products based on semiconductor technologies.

Recognition

• Baliga is a Member of the National Academy of Engineering (1993) and the European Academy of Sciences (2005), as well as an IEEE Fellow (1983).
• He received the 1991 IEEE Newell Award, 1993 IEEE Morris N. Liebmann Memorial Award, 1998 IEEE J J Ebers Award, and 1999 IEEE Lamme Medal.
• He holds 120 U.S. patents.
• In 1997, Scientific American magazine included him among the 'Eight Heroes of the Semiconductor Revolution' when commemorating the 50th anniversary of the invention of the transistor.
• In 2011, he was awarded the National Medal of Technology and Innovation, the highest award for an engineer in USA by US President Barack Obama.
• In 2014, he was awarded the IEEE Medal of Honor, "For the invention, implementation, and commercialization of power semiconductor devices with widespread benefits to society."
• In 2015, he received the Global Energy Prize for invention, development and commercialization of Insulated Gate Bipolar Transistor, which is one of the most important innovations for the control and distribution of energy.
• In 2016, Baliga was inducted into the National Inventors Hall of Fame.
• He was the Chief Guest for the 53rd Convocation at IIT Madras held on 22-07-2016. He was awarded Doctor of Science (Honoris Causa) in the ceremony.

Further reading

• NCSU biography
• Guide to the B. Jayant Baliga Papers 1984-2002
• ApnaTriangle.com interview with Dr Jayant Baliga