Английская Википедия:International Conference on Nitride Semiconductors
Шаблон:Infobox Academic Conference
The International Conference on Nitride Semiconductors (ICNS) is a major academic conference and exhibition in the field of group III nitride research. It has been held biennially since 1995. Since the second conference in 1997, hosting of the event has rotated between the Asian, European and North American continents. The ICNS and the International Workshop on Nitride Semiconductors (IWN) are held in alternating years, both covering similar subject areas.
ICNS-9 was held at the Scottish Exhibition and Conference Centre in Glasgow, Scotland, on 10–15 July 2011. Keynote speakers included Professor Umesh Mishra (University of California Santa Barbara and Transphorm) and Professor Hiroshi Amano (Meijo University, Nagoya). ICNS-10 was held in Washington, D.C., United States on 25–30 August 2013, ICNS-11 was held in Beijing, China 30 August–4 September 2015 and ICNS-12 was held in Strasbourg, France on 24–28 July 2017.
ICNS-13 was held 7-12 July 2019 in Seattle, Washington, United States, and was chaired by Alan Doolittle (Georgia Institute of Technology, USA)[1]
The ICNS-14 was held in Fukuoka, Japan, from 12-17 November 2023. [2] The conference had a total number of 1241 participants. 424 oral presentations were given and 407 posters presented. Plenary talks were given by Hiroshi Amano (Nagoya University, Japan), Debdeep Jena (Cornell University, USA), Elison Matioli (EPFL, Switzerland), Takashi Mukai (Nichia Corp, Japan), Åsa Haglund (Chalmers University of Technology, Sweden), Aurélien David (Google, USA), Ken Nakata (Sumitomo Electric Industries Ltd., Japan).
The ICNS-15[3] will be held in Malmö, Sweden from 6-11 July 2025. ICNS-15 will present high-impact scientific and technological advances in materials and devices based on group-III nitride semiconductors, and feature plenary sessions, parallel topical sessions, poster sessions and an industrial exhibition. ICNS-15 will celebrate the achievements of Profs. Bo Monemar and Tadek Suski as honorary chairs. Conference chairs are Vanya Darakchieva (Lund University), Piotr Perlin (Center for High Pressure Research at the Polish Academy of Sciences (Unipress), Warsaw, Poland) and Lars Samuelson (Lund University, Sweden and Southern University of Science and Technology (SUSTech), Shenzhen, China).
Conference list
Conference name | Location | Dates |
---|---|---|
ICNS-15[4] | Шаблон:Flagicon Malmö, Sweden | 6-11 July 2025 |
ICNS-14[5] | Шаблон:Flagicon Fukuoka, Japan | 12-17 November 2023 |
ICNS-13[6] | Шаблон:Flagicon Bellevue, Washington, Seattle’s Eastside, United States | 7–12 July 2019 |
ICNS-12[7] | Шаблон:Flagicon Strasbourg, France | 24–28 July 2017 |
ICNS-11[8] | Шаблон:Flagicon Beijing, China | 30 August – 4 September 2015 |
ICNS-10[9] | Шаблон:Flagicon Washington D.C., United States | 25–30 August 2013 |
ICNS-9[10] | Шаблон:Flagicon Glasgow, UK | 10–15 July 2011 |
ICNS-8[11] | Шаблон:Flagicon Jeju, Korea | 18–23 October 2009 |
ICNS-7[12][13] | Шаблон:Flagicon Las Vegas, United States | 16–21 September 2007 |
ICNS-6[14] | Шаблон:Flagicon Bremen, Germany | 28 August – 2 September 2005 |
ICNS-5[15] | Шаблон:Flagicon Nara, Japan | 25–30 May 2003 |
ICNS-4[16] | Шаблон:Flagicon Denver, United States | 16–20 July 2001 |
ICNS-3[17] | Шаблон:Flagicon Montpellier, France | 4–9 July 1999 |
ICNS-2[18] | Шаблон:Flagicon Tokushima, Japan | 27–31 October 1997 |
TWN'95[19] | Шаблон:Flagicon Nagoya, Japan | 21–23 September 1995 |
See also
- Gallium nitride
- Indium nitride
- Aluminium nitride
- Boron nitride (hexagonal form)
References
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ G. Zhang, B. Shen, G. Zhang, T. Yu, N. Tang, X. Yang and S. Li (2016), "Preface: Nitride Semiconductors" Physica Status Solidi C 13 (5–6) 177–180 Шаблон:Doi
- ↑ J. A. Freitas, C. Wetzel, C. R. Eddy and A. Khan (2014), "Preface: Nitride Semiconductors" Physica Status Solidi C 11 (3–4) 370–372 Шаблон:Doi
- ↑ P. J. Parbrook, R. W. Martin and M. P. Halsall (2012) "Preface: Phys. Status Solidi C 3–4/2012" Physica Status Solidi C 9 (3–4) 430–432 Шаблон:Doi
- ↑ S.-J. Park (2010) "Preface: Phys. Status Solidi C 7/7-8" Physica Status Solidi C 7 (7-8) 1737–1742 Шаблон:Doi
- ↑ Шаблон:Cite web
- ↑ S. Nakamura, U. Mishra, S. DenBaars, J. S. Speck, M. Wraback, Y. Arakawa, A. Allerman, N. Grandjean, J. Shealy, M. Krames, T. Palacios and D. Jena (2008) "Preface: phys. stat. sol. (c) 5/6" Physica Status Solidi C 5 1472–1474 Шаблон:Doi
- ↑ Шаблон:Cite web
- ↑ H. Amano and T. Udagawa (2003) "Preface: phys. stat. sol. (c) 0/7" Physica Status Solidi C 0 1977 Шаблон:Doi
- ↑ Proceedings of 4th International Conference on Nitride Semiconductors (2002): Part A Physica Status Solidi A 188 (1–2); Part B Physica Status Solidi B 228 (1–2) Шаблон:ISBN
- ↑ Article title
- ↑ A. Mills (1998) "ICNS-2 charts GaN's progress" III-Vs Review 11 (1) 44–49 Шаблон:Doi
- ↑ Topical Workshop on III-V Nitrides