Просмотр кода страницы Английская Википедия:Binary compounds of silicon

{{Английская Википедия/Панель перехода}}
{{Short description|Any binary chemical compound containing just silicon and another chemical element}}
[[File:Diagramme binaire Fe Si analyse thermique 30.svg|frame|right|Experimental iron-silicon phase diagram]]
'''Binary compounds of silicon''' are [[binary compound|binary]] [[chemical compounds]] containing [[silicon]] and one other [[chemical element]].<ref>''Inorganic chemistry'',  Egon Wiberg, Nils Wiberg, Arnold Frederick Holleman</ref> Technically the term [[silicide]] is reserved for any compounds containing silicon bonded to a more [[Electronegativity#Electropositivity|electropositive]] element. Binary silicon compounds can be grouped into several classes.  [[Salt (chemistry)|Salt]]like silicides are formed with the electropositive s-block metals. Covalent silicides and silicon compounds occur with hydrogen and the elements in groups 10 to 17.

[[Transition metal]]s form metallic silicides, with the exceptions of [[silver]], [[gold]] and the [[group 12 elements]]. The general composition is M<sub>n</sub>Si or MSi<sub>n</sub> with n ranging from 1 to 6 and M standing for metal. Examples are M<sub>5</sub>Si,  M<sub>3</sub>Si (Cu, V, Cr, Mo, Mn, Fe, Pt, U), M<sub>2</sub>Si (Zr, Hf, Ta, Ir, Ru, Rh, Co, Ni, Ce), M<sub>3</sub>Si<sub>2</sub> (Hf, Th, U), MSi (Ti, Zr, Hf, Fe, Ce, Th, Pu) and MSi<sub>2</sub> (Ti, V, Nb, Ta, Cr, Mo, W, Re).

The [[Kopp–Neumann law]] applies; heat capacities are linear in the proportion of silicon: <math chem display=block>C_p(\ce{M_xSi_y})=xC_p(\ce{M})+yC_p(\ce{Si})</math>

As a general rule, nonstochiometry implies instability. These [[intermetallics]] are in general resistant to hydrolysis, brittle,  and melt at a lower temperature than the corresponding [[carbide]]s or [[boride]]s. They are electrical conductors.  However, some, such as CrSi<sub>2</sub>, Mg<sub>2</sub>Si, β-FeSi<sub>2</sub> and  MnSi<sub>1.7</sub>, are [[semiconductors]]. Since [[degenerate semiconductor]]s exhibit some metallic properties, such as luster and electrical conductivity which decreases with temperature, some silicides classified as metals may be semiconductors.

==Group 1==
Silicides of [[group 1 elements]] are saltlike silicides, except for [[silane]] (SiH<sub>4</sub>) whose bonds to hydrogen are covalent. Higher silane homologues are [[disilane]] and [[trisilane]]. [[Polysilicon hydride]] is a two-dimensional [[polymer network]].

Many cluster compounds of lithium silicides are known, such as Li<sub>13</sub>Si<sub>4</sub>, Li<sub>22</sub>Si<sub>5</sub>, Li<sub>7</sub>Si<sub>3</sub> and Li<sub>12</sub>Si<sub>7</sub>.<ref>{{cite journal | last=Okamoto | first=H. | title=The Li-Si (Lithium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=11 | issue=3 | year=1990 | issn=0197-0216 | doi=10.1007/bf03029305 | pages=306–312}}</ref> Li<sub>4.4</sub>Si is prepared from silicon and lithium metal in high-energy [[Ball mill]] process.<ref>''Solid state ionics for batteries'', Tsutomu Minami, Masahiro Tatsumisago</ref> Potential uses include electrodes in lithium batteries.  Li<sub>12</sub>Si<sub>7</sub> has a [[Zintl phase]] with planar Si<sub>5</sub><sup>6−</sup> rings. [[Li NMR spectroscopy]] suggests these rings are [[aromatic]].<ref>{{cite journal | last1=Dupke | first1=Sven | last2=Langer | first2=Thorsten | last3=Pöttgen | first3=Rainer | last4=Winter | first4=Martin | last5=Eckert | first5=Hellmut | title=Structural and dynamic characterization of Li<sub>12</sub>Si<sub>7</sub> and Li<sub>12</sub>Ge<sub>7</sub> using solid state NMR | journal=Solid State Nuclear Magnetic Resonance | publisher=Elsevier BV | volume=42 | year=2012 | issn=0926-2040 | doi=10.1016/j.ssnmr.2011.09.002 | pages=17–25| pmid=21996453 }}</ref>

Other group 1 elements also form clusters: sodium silicide can be represented by NaSi, NaSi<sub>2</sub> and Na<sub>11</sub>Si<sub>36</sub><ref>{{cite journal | last1=Songster | first1=J | last2=Pelton | first2=A.D | title=The na-si (sodium-silicon) system | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=13 | issue=1 | year=1992 | issn=1054-9714 | doi=10.1007/bf02645381 | pages=67–69| s2cid=95520630 }}</ref> and '''potassium silicide''' by K<sub>8</sub>Si<sub>46</sub>. Group 1 silicides are in general high melting, metallic grey, with moderate to poor electrical conductance and prepared by heating the elements. Superconducting properties have been reported for  Ba<sub>8</sub>Si<sub>46</sub>.<ref>{{cite journal | last1=Yamanaka | first1=Shoji | last2=Enishi | first2=Eiji | last3=Fukuoka | first3=Hiroshi | last4=Yasukawa | first4=Masahiro | title=High-Pressure Synthesis of a New Silicon Clathrate Superconductor, Ba<sub>8</sub>Si<sub>46</sub> | journal=Inorganic Chemistry | publisher=American Chemical Society (ACS) | volume=39 | issue=1 | date=1999-12-17 | issn=0020-1669 | doi=10.1021/ic990778p | pages=56–58| pmid=11229033 }}</ref> Several silicon [[Zintl ion]]s ({{chem|Si|4|4−}}, {{chem|Si|9|4−}}, {{chem|Si|5|2−}}) are known with group 1 counterions.<ref>{{cite journal | last1=Scharfe | first1=Sandra | last2=Kraus | first2=Florian | last3=Stegmaier | first3=Saskia | last4=Schier | first4=Annette | last5=Fässler | first5=Thomas F. | title=Zintl Ions, Cage Compounds, and Intermetalloid Clusters of Group 14 and Group 15 Elements | journal=Angewandte Chemie International Edition | publisher=Wiley | volume=50 | issue=16 | date=2011-03-31 | issn=1433-7851 | doi=10.1002/anie.201001630 | pages=3630–3670| pmid=21455921 }}</ref>

==Group 2==
Silicides of [[group 2 elements]] are also saltlike silicides except for [[beryllium]] whose phase diagram with silicon is a simple eutectic (1085&nbsp;°C @ 60% by weight silicon).<ref>{{cite journal | last=Okamoto | first=H. | title=Be-Si (Beryllium-Silicon) | journal=Journal of Phase Equilibria and Diffusion | publisher=Springer Science and Business Media LLC | volume=30 | issue=1 | date=2008-12-06 | issn=1547-7037 | doi=10.1007/s11669-008-9433-6 | pages=115| s2cid=96368677 | doi-access=free }}</ref> Again there is variation in composition: [[magnesium silicide]] is represented by Mg<sub>2</sub>Si,<ref>{{cite journal | last1=Nayeb-Hashemi | first1=A. A. | last2=Clark | first2=J. B. | title=The Mg−Si (Magnesium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=5 | issue=6 | year=1984 | issn=0197-0216 | doi=10.1007/bf02868321 | pages=584–592}}</ref> [[Calcium disilicide|calcium silicide]] can be represented by Ca<sub>2</sub>Si, CaSi, CaSi<sub>2</sub>, Ca<sub>5</sub>Si<sub>3</sub> and by Ca<sub>14</sub>Si<sub>19</sub>,<ref>{{cite journal | last1=Currao | first1=Antonio | last2=Wengert | first2=Steffen | last3=Nesper | first3=Reinhard | last4=Curda | first4=Jan | last5=Hillebrecht | first5=H. | title=Ca<sub>14</sub>Si<sub>19</sub> - a Zintl Phase with a Novel Twodimensional Silicon Framework | journal=Zeitschrift für anorganische und allgemeine Chemie | publisher=Wiley | volume=622 | issue=3 | year=1996 | issn=0044-2313 | doi=10.1002/zaac.19966220319 | pages=501–508 | language=de}}</ref> strontium silicide can be represented by  Sr<sub>2</sub>Si, SrSi<sub>2</sub> and Sr<sub>5</sub>Si<sub>3</sub><ref>{{cite journal | last1=Itkin | first1=V. P. | last2=Alcock | first2=C. B. | title=The Si-Sr (Silicon-Strontium) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=10 | issue=6 | year=1989 | issn=0197-0216 | doi=10.1007/bf02877630 | pages=630–634}}</ref> and barium silicide can be represented by  Ba<sub>2</sub>Si, BaSi<sub>2</sub>, Ba<sub>5</sub>Si<sub>3</sub> and Ba<sub>3</sub>Si<sub>4</sub>.<ref>{{cite journal | last1=Aydemir | first1=Umut | last2=Ormeci | first2=Alim | last3=Borrmann | first3=Horst | last4=Böhme | first4=Bodo | last5=Zürcher | first5=Fabio | last6=Uslu | first6=Burcu | last7=Goebel | first7=Thorsten | last8=Schnelle | first8=Walter | last9=Simon | first9=Paul | last10=Carrillo-Cabrera | first10=Wilder | last11=Haarmann | first11=Frank | last12=Baitinger | first12=Michael | last13=Nesper | first13=Reinhard | last14=von Schnering | first14=Hans Georg | last15=Grin | first15=Yuri |display-authors=5| title=The Metallic Zintl Phase Ba3Si4- Synthesis, Crystal Structure, Chemical Bonding, and Physical Properties | journal=Zeitschrift für anorganische und allgemeine Chemie | publisher=Wiley | volume=634 | issue=10 | year=2008 | issn=0044-2313 | doi=10.1002/zaac.200800116 | pages=1651–1661}}</ref> Mg<sub>2</sub>Si, and its [[solid solution]]s with Mg<sub>2</sub>Ge and Mg<sub>2</sub>Sn, are good [[Thermoelectric materials#Magnesium group IV compounds|thermoelectric material]]s and their [[Thermoelectric materials#Power factor|figure of merit]] values are comparable with those of established materials.

==Transition and inner transition metals==
The [[transition metal]]s form a wide range of silicon [[intermetallics]] with at least one binary crystalline phase. Some exceptions exist. [[Gold]] forms a [[eutectic]] at 363&nbsp;°C with 2.3% silicon by weight (18% atom percent) without mutual solubility in the solid state.<ref>Constitution of Binary Alloys, second edition,  Max Hansen and Kurt Anderko, McGraw-Hill Book Co., (NY NY 1958)  p. 232 and EG Heath, J. of Electro Control, 11, 1961, pp 13-15 as summarized in Constitution of Binary Alloys, First Supplement, Elliott, McGraw-Hill Book Inc., (NY NY 1965)  p. 103</ref> [[Silver]] forms another eutectic at 835&nbsp;°C with 11% silicon by weight, again with negligible mutual solid state solubility. In [[group 12 element|group 12]] all elements form a eutectic close to the metal melting point without mutual solid-state solubility: zinc at 419&nbsp;°C and > 99 atom percent zinc and cadmium at 320&nbsp;°C (< 99% Cd).

Commercially relevant intermetallics are [[group 6 element|group 6]] [[molybdenum disilicide]], a commercial ceramic mostly used as an heating element. [[Tungsten disilicide]] is also a commercially available ceramic with uses in microelectronics. [[Platinum silicide]] is a semiconductor material. [[Ferrosilicon]] is an iron alloy that also contains some calcium and aluminium.

MnSi, known as [[brownleeite]], can be found in outer space. Several Mn silicides form a [[Nowotny phase]]. Nanowires based on silicon and manganese can be synthesised from Mn(CO)<sub>5</sub>SiCl<sub>3</sub> forming nanowires based on Mn<sub>19</sub>Si<sub>33</sub>.<ref>{{cite journal | last1=Higgins | first1=Jeremy M. | last2=Schmitt | first2=Andrew L. | last3=Guzei | first3=Ilia A. | last4=Jin | first4=Song | title=Higher Manganese Silicide Nanowires of Nowotny Chimney Ladder Phase | journal=Journal of the American Chemical Society | publisher=American Chemical Society (ACS) | volume=130 | issue=47 | date=2008-11-05 | issn=0002-7863 | doi=10.1021/ja8065122 | pages=16086–16094| pmid=18983151 }}</ref> or grown on a silicon surface<ref>{{cite journal | last1=Wang | first1=Dan | last2=Zou | first2=Zhi-Qiang | title=Formation of manganese silicide nanowires on Si(111) surfaces by the reactive epitaxy method | journal=Nanotechnology | publisher=IOP Publishing | volume=20 | issue=27 | date=2009-06-17 | issn=0957-4484 | doi=10.1088/0957-4484/20/27/275607 | page=275607| pmid=19531857 | bibcode=2009Nanot..20A5607W | s2cid=35197350 }}
</ref><ref>{{cite journal | last1=Krause | first1=M. R. | last2=Stollenwerk | first2=A. | last3=Licurse | first3=M. | last4=LaBella | first4=V. P. | title=Ostwald ripening of manganese silicide islands on Si(001) | journal=Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films | publisher=American Vacuum Society | volume=24 | issue=4 | year=2006 | issn=0734-2101 | doi=10.1116/1.2167070 | pages=1480–1483| bibcode=2006JVSTA..24.1480K }}</ref><ref>{{cite journal | last1=Wang | first1=Jinliang | last2=Hirai | first2=Masaaki | last3=Kusaka | first3=Masahiko | last4=Iwami | first4=Motohiro | title=Preparation of manganese silicide thin films by solid phase reaction | journal=Applied Surface Science | publisher=Elsevier BV | volume=113-114 | year=1997 | issn=0169-4332 | doi=10.1016/s0169-4332(96)00823-9 | pages=53–56| bibcode=1997ApSS..113...53W }}</ref> MnSi<sub>1.73</sub> was investigated as [[thermoelectric materials|thermoelectric material]]<ref>{{cite journal | last1=Itoh | first1=Takashi | last2=Yamada | first2=Masataka | title=Synthesis of Thermoelectric Manganese Silicide by Mechanical Alloying and Pulse Discharge Sintering | journal=Journal of Electronic Materials | publisher=Springer Science and Business Media LLC | volume=38 | issue=7 | date=2009-02-27 | issn=0361-5235 | doi=10.1007/s11664-009-0697-3 | pages=925–929| bibcode=2009JEMat..38..925I | s2cid=135674442 }}</ref> and as an optoelectronic thin film.<ref>{{cite journal | last=Mahan | first=John E. | title=The potential of higher manganese silicide as an optoelectronic thin film material | journal=Thin Solid Films | publisher=Elsevier BV | volume=461 | issue=1 | year=2004 | issn=0040-6090 | doi=10.1016/j.tsf.2004.02.090 | pages=152–159| bibcode=2004TSF...461..152M }}</ref> Single-crystal MnSi<sub>1.73</sub> can form from a tin-lead melt<ref>{{cite journal | last1=Solomkin | first1=F. Yu. | last2=Zaitsev | first2=V. K. | last3=Kartenko | first3=N. F. | last4=Kolosova | first4=A. S. | last5=Samunin | first5=A. Yu. | last6=Isachenko | first6=G. N. | title=Crystallization of highest manganese silicide MnSi1.71–1.75 from tin-lead solution-melt | journal=Technical Physics | publisher=Pleiades Publishing Ltd | volume=53 | issue=12 | year=2008 | issn=1063-7842 | doi=10.1134/s1063784208120190 | pages=1636–1637| bibcode=2008JTePh..53.1636S | s2cid=120204099 }}</ref>

In the frontiers of technological research, iron disilicide is becoming more and more relevant to [[optoelectronics]], specially in its crystalline form β-FeSi<sub>2</sub>.<ref>Wetzig, Klaus; Schneider, Claus Michael (eds.). [https://books.google.com/books?id=0LgYYj3Q1pIC ''Metal based thin films for electronics.'']{{Dead link|date=October 2023 |bot=InternetArchiveBot |fix-attempted=yes }} Wiley-VCH, 2006 (2nd edition), p. 64. {{ISBN|3-527-40650-6}}</ref><ref>[http://www.nature.com/nature/journal/v387/n6634/full/387686a0.html ''A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm.''] D. Leong, M. Harry, K. J. Reeson and K. P. Homewood. Nature 387, 686-688, 12 June 1997.</ref> They are used as thin films or as nanoparticles, obtained by means of epitaxial growth on a silicon substrate.<ref>{{cite journal | last1=Rizzi | first1=A. | last2=Rösen | first2=B. N. E. | last3=Freundt | first3=D. | last4=Dieker | first4=Ch. | last5=Lüth | first5=H. | last6=Gerthsen | first6=D. | title=Heteroepitaxy of β-FeSi2on Si by gas-source MBE | journal=Physical Review B | publisher=American Physical Society (APS) | volume=51 | issue=24 | date=1995-06-15 | issn=0163-1829 | doi=10.1103/physrevb.51.17780 | pages=17780–17794| pmid=9978811 | bibcode=1995PhRvB..5117780R }}</ref><ref>{{cite journal | last1=Mahan | first1=John E. | last2=Thanh | first2=V. Le | last3=Chevrier | first3=J. | last4=Berbezier | first4=I. | last5=Derrien | first5=J. | last6=Long | first6=Robert G. | title=Surface electron‐diffraction patterns of β‐FeSi<sub>2</sub> films epitaxially grown on silicon | journal=Journal of Applied Physics | publisher=AIP Publishing | volume=74 | issue=3 | year=1993 | issn=0021-8979 | doi=10.1063/1.354804 | pages=1747–1761| bibcode=1993JAP....74.1747M | hdl=10217/67931 | hdl-access=free }}</ref>

{| class="wikitable sortable collapsible" border="1"
|-
! [[Atomic number]]
! Name
! [[Chemical symbol|Symbol]]
! [[Group (periodic table)|Group]]
! [[Period (periodic table)|Period]]
! [[Periodic table block|Block]]
! Phases
|-
| 21
| [[Scandium]]
| Sc
| 3
| 4
| d
| Sc<sub>5</sub>Si<sub>3</sub>, ScSi, Sc<sub>2</sub>Si<sub>3</sub>,<ref name=Schlesinger /><ref>{{cite journal | last1=Kotroczo | first1=V. | last2=McColm | first2=I.J. | title=Phases in rapidly cooled scandium-silicon samples | journal=Journal of Alloys and Compounds | publisher=Elsevier BV | volume=203 | year=1994 | issn=0925-8388 | doi=10.1016/0925-8388(94)90744-7 | pages=259–265}}</ref><ref>{{cite journal | last=Okamoto | first=H. | title=Comment on Sc-Si (Scandium-Silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=16 | issue=5 | year=1995 | issn=1054-9714 | doi=10.1007/bf02645365 | pages=477| s2cid=94990578 }}</ref><ref>{{cite journal | last=Okamoto | first=H. | title=Sc-Si (Scandium-Silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=13 | issue=6 | year=1992 | issn=1054-9714 | doi=10.1007/bf02667229 | pages=679–681| s2cid=93869056 }}</ref>
|-
| 22
| [[Titanium]]
| Ti
| 4
| 4
| d
|  Ti<sub>5</sub>Si<sub>3</sub>, TiSi, TiSi<sub>2</sub>, TiSi<sub>3</sub>,  Ti<sub>6</sub>Si<sub>4</sub><ref name=Schlesinger />
|-
| 23
| [[Vanadium]]
| V
| 5
| 4
| d
|  V<sub>3</sub>Si, V<sub>5</sub>Si<sub>3</sub>, V<sub>6</sub>Si<sub>5</sub>, VSi<sub>2</sub>, V<sub>6</sub>Si<sub>5</sub><ref name=Schlesinger /><ref>{{cite journal | last=Smith | first=J. F. | title=The Si−V (Silicon-Vanadium) system: Addendum | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=3 | year=1985 | issn=0197-0216 | doi=10.1007/bf02880413 | pages=266–271}}</ref>
|-
| 24
| [[Chromium]]
| Cr
| 6
| 4
| d
|  Cr<sub>3</sub>Si, Cr<sub>5</sub>Si<sub>3</sub>, CrSi, CrSi<sub>2</sub><ref name=Schlesinger /><ref>{{cite journal | last1=Gokhale | first1=A. B. | last2=Abbaschian | first2=G. J. | title=The Cr−Si (Chromium-Silicon) system | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=8 | issue=5 | year=1987 | issn=1054-9714 | doi=10.1007/bf02893156 | pages=474–484| s2cid=95591626 }}</ref>
|-
| 25
| [[Manganese]]
| Mn
| 7
| 4
| d
|  MnSi, Mn<sub>9</sub>Si<sub>2</sub>, Mn<sub>3</sub>Si, Mn<sub>5</sub>Si<sub>3</sub>, Mn<sub>11</sub>Si<sub>9</sub><ref name=Schlesinger />
|-
| 26
| [[Iron]]
| Fe
| 8
| 4
| d
|[[Iron disilicide|FeSi<sub>2</sub>]], [[Iron monosilicide|FeSi]]<ref>{{cite journal | last1=Pauling | first1=L. |author-link=Linus Pauling| last2=Soldate | first2=A. M. | title=The nature of the bonds in the iron silicide, FeSi, and related crystals | journal=Acta Crystallographica | publisher=International Union of Crystallography (IUCr) | volume=1 | issue=4 | date=1948-09-01 | issn=0365-110X | doi=10.1107/s0365110x48000570 | pages=212–216| bibcode=1948AcCry...1..212P |url=https://onlinelibrary.wiley.com/doi/epdf/10.1107/S0365110X48000570?sentby=iucr}}</ref><ref>{{cite journal | last1=Vočadlo | first1=Lidunka | last2=Price | first2=Geoffrey D. | last3=Wood | first3=I. G. | title=Crystal structure, compressibility and possible phase transitions in epsilon-FeSi studied by first-principles pseudopotential calculations | journal=Acta Crystallographica Section B: Structural Science | publisher=International Union of Crystallography (IUCr) | volume=55 | issue=4 | date=1999-08-01 | issn=0108-7681 | doi=10.1107/s0108768199001214 | pages=484–493| pmid=10927390 }}</ref> [[Xifengite|{{chem2|Fe5Si3}}]], [[Diiron silicide|Fe<sub>2</sub>Si]], [[Triiron silicide|Fe<sub>3</sub>Si]]
|-
| 27
| [[Cobalt]]
| Co
| 9
| 4
| d
|  CoSi, CoSi<sub>2</sub>, Co<sub>2</sub>Si, Co<sub>2</sub>Si, Co<sub>3</sub>Si<ref>{{cite journal | last1=Walter | first1=Dirk | last2=Karyasa | first2=I W. | title=Synthesis and Characterization of Cobalt Monosilicide (CoSi) with CsCl Structure Stabilized by a β-SiC Matrix | journal=Zeitschrift für anorganische und allgemeine Chemie | publisher=Wiley | volume=631 | issue=6–7 | year=2005 | issn=0044-2313 | doi=10.1002/zaac.200500050 | pages=1285–1288 | language=de| doi-access=free }}</ref><ref>{{cite journal | last1=Ishida | first1=K | last2=Nishizawa | first2=T | last3=Schlesinger | first3=M. E | title=The Co-Si (Cobalt-Silicon) system | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=12 | issue=5 | year=1991 | issn=1054-9714 | doi=10.1007/bf02645074 | pages=578–586| s2cid=94983677 }}</ref>
|-
| 28
| [[Nickel]]
| Ni
| 10
| 4
| d
| Ni<sub>3</sub>Si, Ni<sub>31</sub>Si<sub>12</sub>, Ni<sub>2</sub>Si, Ni<sub>3</sub>Si<sub>2</sub>, NiSi ([[Nickel monosilicide]]), NiSi<sub>2</sub><ref name=Schlesinger /><ref>{{cite journal | last1=Nash | first1=P. | last2=Nash | first2=A. | title=The Ni−Si (Nickel-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=8 | issue=1 | year=1987 | issn=0197-0216 | doi=10.1007/bf02868885 | pages=6–14}}</ref>
|-
| 29
| [[Copper]]
| Cu
| 11
| 4
| d
| Cu<sub>17</sub>Si<sub>3</sub>, Cu<sub>56</sub>Si<sub>11</sub>,Cu<sub>5</sub>Si, Cu<sub>33</sub>Si<sub>7</sub>, Cu<sub>4</sub>Si, Cu<sub>19</sub>Si<sub>6</sub>,Cu<sub>3</sub>Si,Cu<sub>87</sub>Si<sub>13</sub><ref name=Schlesinger>{{cite journal | last=Schlesinger | first=Mark E. | title=Thermodynamics of solid transition-metal silicides | journal=Chemical Reviews | publisher=American Chemical Society (ACS) | volume=90 | issue=4 | date=1990-06-01 | issn=0009-2665 | doi=10.1021/cr00102a003 | pages=607–628}}</ref><ref>{{cite journal | last=Okamoto | first=H. | title=Cu-Si (copper-silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=23 | issue=3 | year=2002 | issn=1054-9714 | doi=10.1361/105497102770331857 | pages=281–282| s2cid=98185051 }}</ref>
|-
| 30
| [[Zinc]]
| Zn
| 12
| 4
| d
| eutectic<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Si-Zn (Silicon-Zinc) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=6 | year=1985 | issn=0197-0216 | doi=10.1007/bf02887156 | pages=545–548}}</ref>
|-
| 39
| [[Yttrium]]
| Y
| 3
| 4
| d
| Y<sub>5</sub>Si<sub>3</sub>,  Y<sub>5</sub>Si<sub>4</sub>, YSi,  Y<sub>3</sub>Si<sub>5</sub>,<ref>{{cite journal | last1=Gokhale | first1=A. B. | last2=Abbaschian | first2=G. J. | title=The Si−Y (Silicon-Yttrium) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=7 | issue=5 | year=1986 | issn=0197-0216 | doi=10.1007/bf02867814 | pages=485–489}}</ref><ref>{{cite journal | last1=Pöttgen | first1=Rainer | last2=Hoffmann | first2=Rolf-Dieter | last3=Kußmann | first3=Dirk | title=The Binary Silicides Eu5Si3 and Yb3Si5 - Synthesis, Crystal Structure, and Chemical Bonding | journal=Zeitschrift für anorganische und allgemeine Chemie | publisher=Wiley | volume=624 | issue=6 | year=1998 | issn=0044-2313 | doi=10.1002/(sici)1521-3749(199806)624:6<945::aid-zaac945>3.0.co;2-d | pages=945–951 | language=de}}</ref> YSi<sub>1.4</sub>.<ref>{{cite journal | last1=Kubata | first1=Christof | last2=Krumeich | first2=Frank | last3=Wörle | first3=Michael | last4=Nesper | first4=Reinhard | title=The Real Structure of YbSi1.4 - Commensurately and Incommensurately Modulated Silicon Substructures | journal=Zeitschrift für anorganische und allgemeine Chemie | publisher=Wiley | volume=631 | issue=2–3 | year=2005 | issn=0044-2313 | doi=10.1002/zaac.200400423 | pages=546–555 | language=de}}</ref>
|-
| 40
| [[Zirconium]]
| Zr
| 4
| 5
| d
| Zr<sub>5</sub>Si<sub>3</sub>, Zr<sub>5</sub>Si<sub>4</sub>, ZrSi, ZrSi<sub>2</sub>,<ref name=Schlesinger /> Zr<sub>3</sub>Si<sub>2</sub>, Zr<sub>2</sub>Si, Zr<sub>3</sub>Si<ref>{{cite journal | last=Okamoto | first=H. | title=The Si-Zr (Silicon-Zirconium) system | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=11 | issue=5 | year=1990 | issn=1054-9714 | doi=10.1007/bf02898272 | pages=513–519}}</ref>
|-
| 41
| [[Niobium]]
| Nb
| 5
| 5
| d
| Nb<sub>5</sub>Si<sub>3</sub>, Nb<sub>4</sub>Si<ref name=Schlesinger />
|-
| 42
| [[Molybdenum]]
| Mo
| 6
| 5
| d
|  Mo<sub>3</sub>Si, Mo<sub>5</sub>Si<sub>3</sub>, MoSi<sub>2</sub><ref name=Schlesinger />
|-
| 43
| [[Technetium]]
| Tc
| 7
| 5
| d
| Tc<sub>4</sub>Si<sub>7</sub> (proposed)<ref>{{cite journal | last=Grin | first=Juri N. | title=Ein Aufbaumodell für "Chimney-Ladder"-Strukturen | journal=Monatshefte für Chemie Chemical Monthly | publisher=Springer Science and Business Media LLC | volume=117 | issue=8–9 | year=1986 | issn=0026-9247 | doi=10.1007/bf00811261 | pages=921–932 | s2cid=94740968 | language=de}}</ref>
|-
| 44
| [[Ruthenium]]
| Ru
| 8
| 5
| d
| Ru<sub>2</sub>Si, Ru<sub>4</sub>Si<sub>3</sub>, RuSi,  Ru<sub>2</sub>Si<sub>3</sub><ref>{{cite journal | last1=Perring | first1=L. | last2=Bussy | first2=F. | last3=Gachon | first3=J.C. | last4=Feschotte | first4=P. | title=The Ruthenium–Silicon system | journal=Journal of Alloys and Compounds | publisher=Elsevier BV | volume=284 | issue=1–2 | year=1999 | issn=0925-8388 | doi=10.1016/s0925-8388(98)00911-6 | pages=198–205}}</ref><ref>{{cite journal | last=Okamoto | first=H. | title=Ru-Si (Ruthenium-Silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=21 | issue=5 | year=2000 | issn=1054-9714 | doi=10.1361/105497100770339806 | pages=498}}</ref>
|-
| 45
| [[Rhodium]]
| Rh
| 9
| 5
| d
| RhSi,<ref>{{cite journal | last1=Geller | first1=S. | last2=Wood | first2=E. A. | title=The crystal structure of rhodium silicide, RhSi | journal=Acta Crystallographica | publisher=International Union of Crystallography (IUCr) | volume=7 | issue=5 | date=1954-05-20 | issn=0365-110X | doi=10.1107/s0365110x54001314 | pages=441–443| bibcode=1954AcCry...7..441G }}</ref> Rh<sub>2</sub>Si,  Rh<sub>5</sub>Si<sub>3</sub>, Rh<sub>3</sub>Si<sub>2</sub>, Rh<sub>20</sub>Si<sub>13</sub><ref>{{cite journal | last=Schlesinger | first=M.E | title=The rh-si (rhodium-silicon) system | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=13 | issue=1 | year=1992 | issn=1054-9714 | doi=10.1007/bf02645377 | pages=54–59| s2cid=96736788 }}</ref>
|-
| 46
| [[Palladium]]
| Pd
| 10
| 5
| d
| Pd<sub>5</sub>Si, Pd<sub>9</sub>Si<sub>2</sub>, Pd<sub>3</sub>Si, Pd<sub>2</sub>Si, PdSi<ref>{{cite journal | last1=Baxi | first1=H. C. | last2=Massalski | first2=T. B. | title=The pdsi (palladiumsilicon) system | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=12 | issue=3 | year=1991 | issn=1054-9714 | doi=10.1007/bf02649925 | pages=349–356| s2cid=100418050 }}</ref>  
|-
| 47
| [[Silver]]
| Ag
| 11
| 5
| d
| eutectic<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Gokhale | first2=A. B. | last3=Abbaschian | first3=G. J. | title=The Ag-Si (Silver-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=10 | issue=6 | year=1989 | issn=0197-0216 | doi=10.1007/bf02877631 | pages=635–640}}</ref>
|-
| 48
| [[Cadmium]]
| Cd
| 12
| 5
| d
| eutectic<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Cd-Si (Cadmium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=6 | year=1985 | issn=0197-0216 | doi=10.1007/bf02887152 | pages=534–536}}</ref>
|-
| 57
| [[Lanthanum]]
| La
|
| 6
| f
| La<sub>5</sub>Si<sub>3</sub>, La<sub>3</sub>Si<sub>2</sub>, La<sub>5</sub>Si<sub>4</sub>, LaSi, LaSi<sub>2</sub><ref>{{cite journal | last=Okamoto | first=H. | title=La-Si (Lanthanum-Silicon) | journal=Journal of Phase Equilibria and Diffusion | publisher=Springer Science and Business Media LLC | volume=28 | issue=6 | date=2007-10-10 | issn=1547-7037 | doi=10.1007/s11669-007-9204-9 | pages=585| s2cid=98826249 }}</ref>
|-
| 58
| [[Cerium]]
| Ce
|
| 6
| f
| Ce<sub>5</sub>Si<sub>3</sub>, Ce<sub>3</sub>Si<sub>2</sub>, Ce<sub>5</sub>Si<sub>4</sub>, CeSi,<ref>{{cite journal | last1=Bulanova | first1=M.V. | last2=Zheltov | first2=P.N. | last3=Meleshevich | first3=K.A. | last4=Saltykov | first4=P.A. | last5=Effenberg | first5=G. | title=Cerium–silicon system | journal=Journal of Alloys and Compounds | publisher=Elsevier BV | volume=345 | issue=1–2 | year=2002 | issn=0925-8388 | doi=10.1016/s0925-8388(02)00409-7 | pages=110–115}}</ref>  Ce<sub>3</sub>Si<sub>5</sub>, CeSi<sub>2</sub><ref>{{cite journal | last1=Munitz | first1=A. | last2=Gokhale | first2=A. B. | last3=Abbaschian | first3=G. J. | title=The Ce-Si (Cerium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=10 | issue=1 | year=1989 | issn=0197-0216 | doi=10.1007/bf02882179 | pages=73–78}}</ref>
|-
| 59
| [[Praseodymium]]
| Pr
|
| 6
| f
| Pr<sub>5</sub>Si<sub>3</sub>, Pr<sub>3</sub>Si<sub>2</sub>, Pr<sub>5</sub>Si<sub>4</sub>, PrSi, PrSi<sub>2</sub><ref>{{cite journal | last1=Gorbachuk | first1=N. P. | last2=Bolgar | first2=A. S. | last3=Blinder | first3=A. V. | title=Thermodynamic properties of praseodymium silicides in the temperature range 298.15-2257 K | journal=Powder Metallurgy and Metal Ceramics | publisher=Springer Science and Business Media LLC | volume=36 | issue=9–10 | year=1997 | issn=1068-1302 | doi=10.1007/bf02680501 | pages=498–501| s2cid=94765578 }}</ref>
|-
| 60
| [[Neodymium]]
| Nd
|
| 6
| f
| Nd<sub>5</sub>Si<sub>3</sub>, Nd<sub>5</sub>Si<sub>4</sub>, Nd<sub>5</sub>Si<sub>3</sub>,NdSi, Nd<sub>3</sub>Si<sub>4</sub>, Nd<sub>2</sub>Si<sub>3</sub>, NdSi<sub>x</sub><ref>{{cite journal | last1=Gokhale | first1=A. B. | last2=Munitz | first2=A. | last3=Abbaschian | first3=G. J. | title=The Nd-Si (Neodymium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=10 | issue=3 | year=1989 | issn=0197-0216 | doi=10.1007/bf02877504 | pages=246–251}}</ref>
|-
| 61
| [[Promethium]]
| Pm
|
| 6
| f
| 
|-
| 62
| [[Samarium]]
| Sm
|
| 6
| f
| Sm<sub>5</sub>Si<sub>4</sub>, Sm<sub>5</sub>Si<sub>3</sub>, SmSi, Sm<sub>3</sub>Si<sub>5</sub>, SmSi<sub>2</sub><ref>{{cite journal | last1=Gokhale | first1=A. B. | last2=Abbaschian | first2=G. J. | title=The Si-Sm (Silicon-Samarium) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=9 | issue=5 | year=1988 | issn=0197-0216 | doi=10.1007/bf02881960 | pages=582–585}}</ref>
|-
| 63
| [[Europium]]
| Eu
|
| 6
| f
| 
|-
| 64
| [[Gadolinium]]
| Gd
|
| 6
| f
| Gd<sub>5</sub>Si<sub>3</sub>, Gd<sub>5</sub>Si<sub>4</sub>, GdSi, GdSi<sub>2</sub><ref>{{cite journal | last1=Gokhale | first1=A. B. | last2=Abbaschian | first2=G. J. | title=The Gd−Si (Gadolinium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=9 | issue=5 | year=1988 | issn=0197-0216 | doi=10.1007/bf02881958 | pages=574–578}}</ref>
|-
| 65
| [[Terbium]]
| Tb
|
| 6
| f
| Si<sub>2</sub>Tb ([[terbium silicide]]), SiTb, Si<sub>4</sub>Tb<sub>5</sub>,  Si<sub>3</sub>Tb<sub>5</sub><ref>{{cite journal | last=Okamoto | first=H. | title=Si-Tb (Silicon-Terbium) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=21 | issue=5 | year=2000 | issn=1054-9714 | doi=10.1361/105497100770339824 | pages=500}}</ref>
|-
| 66
| [[Dysprosium]]
| Dy
|
| 6
| f
| Dy<sub>5</sub>Si<sub>5</sub>, DySi, DySi<sub>2</sub><ref>{{cite journal | last1=Gorbachuk | first1=Nikolai P. | last2=Bolgar | first2=Alexander S. |title=The Enthalpies of DySi2 and HoSi1.67 at 298.15-2007 K| journal=Powder Metallurgy and Metal Ceramics | publisher=Springer Science and Business Media LLC | volume=41 | issue=3/4 | year=2002 | issn=1068-1302 | doi=10.1023/a:1019891128273 | pages=173–176| s2cid=91215617 }}</ref>
|-
| 67
| [[Holmium]]
| Ho
|
| 6
| f
| Ho<sub>5</sub>Si<sub>3</sub>,Ho<sub>5</sub>Si<sub>4</sub>,HoSi,Ho<sub>4</sub>Si<sub>5</sub>,HoSi<sub>2</sub><ref>{{cite journal | last=Okamoto | first=H. | title=Ho-Si (holmium-silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=17 | issue=4 | year=1996 | issn=1054-9714 | doi=10.1007/bf02665570 | pages=370–371| s2cid=93224227 }}</ref>
|-
| 68
| [[Erbium]]
| Er
|
| 6
| f
| Er<sub>5</sub>Si<sub>3</sub>, Er<sub>5</sub>Si<sub>4</sub>, ErSi, ErSi<sub>2</sub><ref>{{cite journal | last=Okamoto | first=H. | title=Er-Si (erbium-silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=18 | issue=4 | year=1997 | issn=1054-9714 | doi=10.1007/s11669-997-0073-z | pages=403}}</ref>
|-
| 69
| [[Thulium]]
| Tm
|
| 6
| f
| 
|-
| 70
| [[Ytterbium]]
| Yb
|
| 6
| f
| Si<sub>1.8</sub>Yb,Si<sub>5</sub>Yb<sub>3</sub>,Si<sub>4</sub>Yb<sub>3</sub>, SiYb, Si<sub>4</sub>Yb<sub>5</sub>, Si<sub>3</sub>Yb<sub>5</sub><ref>{{cite journal | last=Okamoto | first=H. | title=Si-Yb (Silicon-Ytterbium) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=24 | issue=6 | year=2003 | issn=1054-9714 | doi=10.1361/105497103772084787 | pages=583| s2cid=196735476 | doi-access=free }}</ref>
|-
| 71
| [[Lutetium]]
| Lu
| 3
| 6
| d
| Lu<sub>5</sub>Si<sub>3</sub><ref>{{cite journal | last1=Topor | first1=L. | last2=Kleppa | first2=O.J. | title=Standard enthalpies of formation of Me5Si3 (Me - Y, Lu, Zr) and of Hf3Si2 | journal=Journal of the Less Common Metals | publisher=Elsevier BV | volume=167 | issue=1 | year=1990 | issn=0022-5088 | doi=10.1016/0022-5088(90)90292-r | pages=91–99}}</ref>
|-
| 72
| [[Hafnium]]
| Hf
| 4
| 6
| d
|  Hf<sub>2</sub>Si, Hf<sub>3</sub>Si<sub>2</sub>,  HfSi, Hf<sub>5</sub>Si<sub>4</sub>, HfSi<sub>2</sub><ref name=Schlesinger /><ref>{{cite journal | last1=Gokhale | first1=A. B. | last2=Abbaschian | first2=G. J. | title=The Hf-Si (hafnium-silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=10 | issue=4 | year=1989 | issn=0197-0216 | doi=10.1007/bf02877595 | pages=390–393}}</ref>
|-
| 73
| [[Tantalum]]
| Ta
| 5
| 6
| d 
| Ta<sub>9</sub>Si<sub>2</sub>, Ta<sub>3</sub>Si, Ta<sub>5</sub>Si<sub>3</sub><ref name=Schlesinger />
|-
| 74
| [[Tungsten]]
| W
| 6
| 6
| d
|  W<sub>5</sub>Si<sub>3</sub>, WSi<sub>2</sub><ref>''Tungsten: Properties, Chemistry, Technology of the Element, Alloys, and Chemical Compounds'' Lassner, Erik, Schubert, Wolf-Dieter 1999</ref>
|-
| 75
| [[Rhenium]]
| Re
| 7
| 6
| d
| Re<sub>2</sub>Si, ReSi, ReSi<sub>1.8</sub><ref>{{cite journal | last1=Gokhale | first1=A. B. | last2=Abbaschian | first2=R. | title=The Re-Si system (rhenium-silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=17 | issue=5 | year=1996 | issn=1054-9714 | doi=10.1007/bf02667640 | pages=451–454| s2cid=95014982 }}</ref> Re<sub>5</sub>Si<sub>3</sub><ref name=Schlesinger />
|-
| 76
| [[Osmium]]
| Os
| 8
| 6
| d
| OsSi, Os<sub>2</sub>Si<sub>3</sub>, OsSi<sub>2</sub><ref>{{cite journal | last=Okamoto | first=H. | title=Os-Si (Osmium-Silicon) | journal=Journal of Phase Equilibria and Diffusion | publisher=Springer Science and Business Media LLC | volume=28 | issue=4 | date=2007-06-07 | issn=1547-7037 | doi=10.1007/s11669-007-9121-y | pages=410| s2cid=95791114 }}</ref>
|-
| 77
| [[Iridium]]
| Ir
| 9
| 6
| d
| IrSi, Ir<sub>4</sub>Si<sub>5</sub>, Ir<sub>3</sub>Si<sub>4</sub>, Ir<sub>3</sub>Si<sub>5</sub>, IrSi<sub>3</sub>.  Ir<sub>2</sub>Si<sub>3</sub>, Ir<sub>4</sub>Si<sub>7</sub>, IrSi<sub>2</sub><ref>{{cite journal | last1=Allevato | first1=C.E. | last2=Vining | first2=Cronin B. | title=Phase diagram and electrical behavior of silicon-rich iridium silicide compounds | journal=Journal of Alloys and Compounds | publisher=Elsevier BV | volume=200 | issue=1–2 | year=1993 | issn=0925-8388 | doi=10.1016/0925-8388(93)90478-6 | pages=99–105}}</ref><ref>{{cite journal | last1=Jeitschko | first1=W. | last2=Parthé | first2=E. | title=The crystal structure of Rh17Ga22, an example of a new kind of electron compound | journal=Acta Crystallographica | publisher=International Union of Crystallography (IUCr) | volume=22 | issue=3 | date=1967-03-10 | issn=0365-110X | doi=10.1107/s0365110x67000799 | pages=417–430| bibcode=1967AcCry..22..417J }}</ref>
|-
| 78
| [[Platinum]]
| Pt
| 10
| 6
| d
| Pt<sub>25</sub>Si<sub>7</sub>, Pt<sub>17</sub>Si<sub>8</sub>,  Pt<sub>6</sub>Si<sub>5</sub>,  Pt<sub>5</sub>Si<sub>2</sub>, Pt<sub>3</sub>Si, Pt<sub>2</sub>Si, PtSi<ref>{{cite journal | last=Okamoto | first=H. | title=Pt-Si (Platinum-Silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=16 | issue=3 | year=1995 | issn=1054-9714 | doi=10.1007/bf02667320 | pages=286–287| s2cid=198916454 }}</ref>
|-
| 79
| [[Gold]]
| Au
| 11
| 6
| d
| [[Eutectic bonding|Eutectic]] diagram at link<ref name="AuSi">{{cite journal | last1=Okamoto | first1=H. | last2=Massalski | first2=T. B. | title=The Au−Si (Gold-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=4 | issue=2 | year=1983 | issn=0197-0216 | doi=10.1007/bf02884878 | pages=190–198}}</ref>
|-
| 80
| [[Mercury (element)|Mercury]]
| Hg
| 12
| 6
| d
| eutectic<ref>{{cite journal | last=Guminski | first=C. | title=The Hg-Si system (mercury-silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=22 | issue=6 | year=2001 | issn=1054-9714 | doi=10.1007/s11669-001-0041-y | pages=682–683}}</ref>
|-
| 89
| [[Actinium]]
| Ac
|
| 7
| f
| 
|-
| 90
| [[Thorium]]
| Th
|
| 7
| f
|  Th<sub>3</sub>Si<sub>2</sub>, ThSi, Th<sub>3</sub>Si<sub>5</sub>, and ThSi<sub>2−x</sub><ref>as summarized in Constitution of Binary Alloys, Second Supplement, Francis A. Shunk, McGraw-Hill Book Inc., (NY NY 1969)  p. 681-82.</ref>
|-
| 91
| [[Protactinium]]
| Pa
|
| 7
| f
| 
|-
| 92
| [[Uranium]]
| U
| 
| 7
| f
| U<sub>3</sub>Si, U<sub>3</sub>Si<sub>2</sub>, USi, U<sub>3</sub>Si<sub>5</sub>, USi<sub>2−x</sub>, USi<sub>2</sub> and USi<sub>3</sub><ref>http://www.rertr.anl.gov/Web1999/PDF/18suripto.pdf {{Bare URL PDF|date=March 2022}}</ref>
|-
| 93
| [[Neptunium]]
| Np
|
| 7
| f
| NpSi<sub>3</sub>, Np<sub>3</sub>Si<sub>2</sub>, and NpSi<ref>{{cite journal | last1=Boulet | first1=Pascal | last2=Bouëxière | first2=Daniel | last3=Rebizant | first3=Jean | last4=Wastin | first4=Franck | title=Structural chemistry of the neptunium–silicon binary system | journal=Journal of Alloys and Compounds | publisher=Elsevier BV | volume=349 | issue=1–2 | year=2003 | issn=0925-8388 | doi=10.1016/s0925-8388(02)00918-0 | pages=172–179}}</ref>
|-
| 94
| [[Plutonium]]
| Pu
|
| 7
| f
| Pu<sub>5</sub>Si<sub>3</sub>, Pu<sub>3</sub>Si<sub>2</sub>, PuSi, Pu<sub>3</sub>Si<sub>5</sub>  and PuSi<sub>2</sub><ref>{{cite journal | last1=Land | first1=C.C. | last2=Johnson | first2=K.A. | last3=Ellinger | first3=F.H. | title=The plutonium-silicon system | journal=Journal of Nuclear Materials | publisher=Elsevier BV | volume=15 | issue=1 | year=1965 | issn=0022-3115 | doi=10.1016/0022-3115(65)90105-4 | pages=23–32| bibcode=1965JNuM...15...23L | url=https://digital.library.unt.edu/ark:/67531/metadc1032796/ }}</ref>
|-
| 95
| [[Americium]]
| Am
|
| 7
| f
| AmSi, AmSi<sub>2</sub><ref>{{cite journal | last1=Weigel | first1=F. | last2=Wittmann | first2=F.D. | last3=Marquart | first3=R. | title=Americium monosilicide and "disilicide" | journal=Journal of the Less Common Metals | publisher=Elsevier BV | volume=56 | issue=1 | year=1977 | issn=0022-5088 | doi=10.1016/0022-5088(77)90217-x | pages=47–53}}</ref>

|-
| 96
| [[Curium]]
| Cm
|
| 7
| f
| CmSi, Cm<sub>2</sub>Si<sub>3</sub>, CmSi<sub>2</sub><ref>{{cite journal | last1=Weigel | first1=F. | last2=Marquart | first2=R. | title=Preparation and properties of some curium silicides | journal=Journal of the Less Common Metals | publisher=Elsevier BV | volume=90 | issue=2 | year=1983 | issn=0022-5088 | doi=10.1016/0022-5088(83)90077-2 | pages=283–290}}</ref>

|-
| 97
| [[Berkelium]]
| Bk
|
| 7
| f
|
|-
| 98
| [[Californium]]
| Cf
|
| 7
| f
|
|-
| 99
| [[Einsteinium]]
| Es
|
| 7
| f
|
|-
| 100
| [[Fermium]]
| Fm
|
| 7
| f
|
|-
| 101
| [[Mendelevium]]
| Md
|
| 7
| f
|
|-
| 102
| [[Nobelium]]
| No
|
| 7
| f
|
|-
| 103
| [[Lawrencium]]
| Lr
| 3
| 7
| d
|
|-
| 104
| [[Rutherfordium]]
| Rf
| 4
| 7
| d
|
|-
| 105
| [[Dubnium]]
| Db
| 5
| 7
| d
|
|-
| 106
| [[Seaborgium]]
| Sg
| 6
| 7
| d
|
|-
| 107
| [[Bohrium]]
| Bh
| 7
| 7
| d
|
|-
| 108
| [[Hassium]]
| Hs
| 8
| 7
| d
|
|-
| 109
| [[Meitnerium]]
| Mt
| 9
| 7
| d
|
|-
| 110
| [[Darmstadtium]]
| Ds
| 10
| 7
| d
|
|-
| 111
| [[Roentgenium]]
| Rg
| 11
| 7
| d
|
|-
| 112
| [[Copernicium]]
| Cn
| 12
| 7
| d
|
|}

==Group 13==
In [[group 13 elements|group 13]] boron (a [[metalloid]]) forms several binary crystalline [[silicon boride]] compounds:  SiB<sub>3</sub>, SiB<sub>6</sub>, SiB<sub>n</sub>.<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The B−Si (Boron-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=5 | issue=5 | year=1984 | issn=0197-0216 | doi=10.1007/bf02872900 | pages=478–484}}</ref> With [[aluminium]], a [[post-transition metal]], a eutectic is formed (577&nbsp;°C @ 12.2 atom % Al) with maximum solubility of silicon in solid aluminium of 1.5%. Commercially relevant [[aluminium alloy]]s containing silicon have at least element added.<ref>{{cite journal | last1=Murray | first1=J. L. | last2=McAlister | first2=A. J. | title=The Al-Si (Aluminum-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=5 | issue=1 | year=1984 | issn=0197-0216 | doi=10.1007/bf02868729 | pages=74–84}}</ref> [[Gallium]], also a  [[post-transition metal]], forms a eutectic at 29&nbsp;°C with 99.99% Ga without mutual solid-state solubility;<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Kanani | first2=N. | last3=Abbaschian | first3=G. J. | title=The Ga−Si (Gallium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=4 | year=1985 | issn=0197-0216 | doi=10.1007/bf02880523 | pages=362–364}}</ref> [[indium]]<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Kanani | first2=N. | last3=Abbaschian | first3=G. J. | title=The In−Si (Indium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=2 | year=1985 | issn=0197-0216 | doi=10.1007/bf02869223 | pages=128–130}}</ref> and thallium<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Si-Zn (Silicon-Thallium) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=6 | year=1985 | issn=0197-0216 | doi=10.1007/bf02887155 | pages=543–544}}</ref> behave similarly.

==Group 14==
[[Silicon carbide]] (SiC) is widely used as a ceramic or example in car brakes and bulletproof vests. It is also used in semiconductor electronics. It is manufactured from [[silicon dioxide]] and carbon in an [[Acheson furnace]] between 1600 and 2500&nbsp;°C. There are 250 known crystalline forms with alpha silicon carbide the most common. Silicon itself is an important semiconductor material used in microchips. It is produced commercially from [[silica]] and [[carbon]] at 1900&nbsp;°C and crystallizes in a diamond cubic crystal structure. [[Germanium silicide]] forms a [[solid solution]] and is again a commercially used semiconductor material.<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Ge−Si (Germanium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=5 | issue=2 | year=1984 | issn=0197-0216 | doi=10.1007/bf02868957 | pages=180–183}}</ref> The [[tin]]–silicon phase diagram is a eutectic<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Si−Sn (Silicon−Tin) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=5 | issue=3 | year=1984 | issn=0197-0216 | doi=10.1007/bf02868552 | pages=273–276}}</ref> and the [[lead]]–silicon phase diagram shows a [[monotectic]] transition and a small eutectic transition but no solid solubility.<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Pb−Si (Lead−Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=5 | issue=3 | year=1984 | issn=0197-0216 | doi=10.1007/bf02868551 | pages=271–273}}</ref>

==Group 15==
[[Silicon nitride]] (Si<sub>3</sub>N<sub>4</sub>) is a ceramic with many commercial high-temperature applications such as engine parts. It can be synthesized from the elements at temperatures between 1300 and 1400&nbsp;°C. Three different crystallographic forms exist.  Other binary silicon nitrogen compounds have been proposed (SiN, Si<sub>2</sub>N<sub>3</sub>, Si<sub>3</sub>N)<ref>{{cite journal | last=Carlson | first=O. N. | title=The N-Si (Nitrogen-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=11 | issue=6 | year=1990 | issn=0197-0216 | doi=10.1007/bf02841719 | pages=569–573}}</ref> and other SiN compounds have been investigated at cryogenic temperatures (SiN<sub>2</sub>, Si(N<sub>2</sub>)<sub>2</sub>, SiNNSi).<ref>{{cite journal | last1=Maier | first1=Günther | last2=Reisenauer | first2=Hans Peter | last3=Glatthaar | first3=Jörg | title=Reactions of Silicon Atoms with Nitrogen: A Combined Matrix Spectroscopic and Density Functional Theory Study1 | journal=Organometallics | publisher=American Chemical Society (ACS) | volume=19 | issue=23 | date=2000-10-21 | issn=0276-7333 | doi=10.1021/om000234r | pages=4775–4783}}</ref> [[Silicon tetraazide]] is an unstable compound that easily detonates.

The phase diagram with [[phosphorus]] shows SiP and SiP<sub>2</sub>.<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Kanani | first2=N. | last3=Abbaschian | first3=G. J. | title=The P−Si (Phosphorus-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=2 | year=1985 | issn=0197-0216 | doi=10.1007/bf02869224 | pages=130–133}}</ref> A reported silicon phosphide  is Si<sub>12</sub>P<sub>5</sub> (no practical applications),<ref>{{cite journal | last1=Carlsson | first1=J. R. A. | last2=Madsen | first2=L. D. | last3=Johansson | first3=M. P. | last4=Hultman | first4=L. | last5=Li | first5=X.-H. | last6=Hentzell | first6=H. T. G. | last7=Wallenberg | first7=L. R. | title=A new silicon phosphide, Si12P5: Formation conditions, structure, and properties | journal=Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films | publisher=American Vacuum Society | volume=15 | issue=2 | year=1997 | issn=0734-2101 | doi=10.1116/1.580497 | pages=394–401| bibcode=1997JVSTA..15..394C }}</ref><ref>{{cite journal | last1=Huang | first1=M. | last2=Feng | first2=Y.P. | title=Further study on structural and electronic properties of silicon phosphide compounds with 3:4 stoichiometry | journal=Computational Materials Science | publisher=Elsevier BV | volume=30 | issue=3–4 | year=2004 | issn=0927-0256 | doi=10.1016/j.commatsci.2004.02.031 | pages=371–375}}</ref> formed by [[annealing (metallurgy)|annealing]] an amorphous Si-P alloy.

The [[arsenic]]–silicon phase diagram  measured at 40 Bar has two phases: SiAs and SiAs<sub>2</sub>.<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The As−Si (Arsenic-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=3 | year=1985 | issn=0197-0216 | doi=10.1007/bf02880410 | pages=254–258}}</ref> The [[antimony]]–silicon system comprises a single eutectic close to the melting point of Sb.<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Sb-Si (Antimony-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=5 | year=1985 | issn=0197-0216 | doi=10.1007/bf02869508 | pages=445–448}}</ref> The [[bismuth]] system is a monotectic.<ref>{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Bi−Si (Bismuth-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=4 | year=1985 | issn=0197-0216 | doi=10.1007/bf02880522 | pages=359–361}}</ref>

==Group 16==
In group 16 [[silicon dioxide]] is a very common compound that widely occurs as sand or quartz. SiO<sub>2</sub> is tetrahedral with each silicon atom surrounded by 4 oxygen atoms. Numerous crystalline forms exist with the tetrahedra linked to form a polymeric chain. Examples are [[tridymite]] and [[cristobalite]]. A less common oxide is [[silicon monoxide]] that can be found in outer space. Unconfirmed reports exist for nonequilibrium Si<sub>2</sub>O, Si<sub>3</sub>O<sub>2</sub>, Si<sub>3</sub>O<sub>4</sub>, Si<sub>2</sub>O<sub>3</sub> and Si<sub>3</sub>O<sub>5</sub>.<ref>{{cite journal | last=Wrledt | first=H. A. | title=The O-Si (Oxygen-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=11 | issue=1 | year=1990 | issn=0197-0216 | doi=10.1007/bf02841583 | pages=43–61}}</ref> [[Silicon sulfide]] is also a chain compound. Cyclic SiS<sub>2</sub> has been reported to exist in the gas phase.<ref>{{cite journal | last1=Mück | first1=Leonie Anna | last2=Lattanzi | first2=Valerio | last3=Thorwirth | first3=Sven | last4=McCarthy | first4=Michael C. | last5=Gauss | first5=Jürgen | title=Cyclic SiS2: A New Perspective on the Walsh Rules | journal=Angewandte Chemie International Edition | publisher=Wiley | volume=51 | issue=15 | date=2012-02-28 | issn=1433-7851 | doi=10.1002/anie.201108982 | pages=3695–3698| pmid=22374622 }}</ref> The phase diagram of silicon with [[selenium]] has two phases: SiSe<sub>2</sub> and SiSe.<ref>{{cite journal | last=Okamoto | first=H. | title=Se-Si (Selenium-Silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=21 | issue=5 | year=2000 | issn=1054-9714 | doi=10.1361/105497100770339815 | pages=499}}</ref> Tellurium silicide is a semiconductor with formula TeSi<sub>2</sub> or Te<sub>2</sub>Si<sub>3</sub>.<ref>{{cite journal | last1=Davey | first1=T. G. | last2=Baker | first2=E. H. | title=A note on the Si-Te phase diagram | journal=Journal of Materials Science | publisher=Springer Science and Business Media LLC | volume=15 | issue=6 | year=1980 | issn=0022-2461 | doi=10.1007/bf00752149 | pages=1601–1602| bibcode=1980JMatS..15.1601D | s2cid=135533614 }}</ref>

==Group 17==
Binary silicon compounds in group 17 are stable compounds ranging from gaseous  [[silicon fluoride]] (SiF<sub>4</sub>) to the liquids [[silicon chloride]] (SiCl<sub>4</sub> and [[silicon bromide]] SiBr<sub>4</sub>) to the solid [[silicon iodide]] (SiI<sub>4</sub>). The [[molecular geometry]] in these compounds is tetrahedral and the bonding mode covalent. Other known stable fluorides in this group are Si<sub>2</sub>F<sub>6</sub>, Si<sub>3</sub>F<sub>8</sub> (liquid) and polymeric solids  known as [[Polysilicon halides|polysilicon fluorides]] (SiF<sub>2</sub>)<sub>x</sub> and (SiF)<sub>x</sub>. The other halides form similar binary silicon compounds.<ref>''Inorganic chemistry'', Egon Wiberg, Nils Wiberg, Arnold Frederick Holleman 2001</ref>

==The periodic table of the binary silicon compounds==

{| class="wikitable" style="margin-left:auto; margin-right:auto; margin-bottom:0; margin-top:0; text-align:top; background-color:white; border:0px"
|- <!-- ##### PERIODE 1 ##### -->
| style="background:#99bbff" | [[Silane|SiH<sub>4</sub>]]
| colspan=1 style="border:none"|
| colspan=11 style="border:none" rowspan=3|
| colspan=5 style="border:none"|
| style="background:white" |He
|- <!-- ##### PERIODE 2 ##### -->
| style="background:#F0DC82" | '''LiSi'''
| style="background:#ddd" |Be
| style="background:#99bbff" | [[Silicon boride|SiB<sub>3</sub>]]
| style="background:#99bbff" | [[Silicon carbide|SiC]]
| style="background:#99bbff"| [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]]
| style="background:#99bbff" | [[Silicon oxide|SiO<sub>2</sub>]]  
| style="background:#99bbff" | [[Silicon tetrafluoride|SiF<sub>4</sub>]]  
| style="background:white" | Ne
|- <!-- ##### PERIODE 3 ##### -->
| style="background:#F0DC82" | '''NaSi'''
| style="background:#F0DC82" | [[Magnesium silicide|Mg<sub>2</sub>Si]] 
| style="background:#ddd" | Al
| style="background:#99bbff" | [[silicon|Si]]
| style="background:#99bbff" | '''SiP'''
| style="background:#99bbff" | [[Silicon sulfide|SiS<sub>2</sub>]]
| style="background:#99bbff" | [[Tetrachlorosilane|SiCl<sub>4</sub>]]  
| style="background:white" | Ar
|- <!-- ##### PERIODE 4 ##### -->
| style="background:#F0DC82" | '''KSi'''  
| style="background:#F0DC82" | [[Calcium disilicide|CaSi<sub>2</sub>]]  
|
| style="background:#98FF98" | '''ScSi'''
| style="background:#98FF98" | '''TiSi'''
| style="background:#98FF98" | '''V<sub>5</sub>Si<sub>3</sub>'''
| style="background:#98FF98" | '''Cr<sub>5</sub>Si<sub>3</sub>'''
| style="background:#98FF98" | [[Manganese monosilicide|MnSi]]
| style="background:#98FF98" | [[Iron monosilicide|FeSi]]
| style="background:#98FF98" | [[Cobalt monosilicide|CoSi]]
| style="background:#98FF98" | [[Nickel monosilicide|NiSi]]
| style="background:#98FF98" | [[Copper silicide|Cu<sub>5</sub>Si]]
| style="background:#ddd" | Zn
| style="background:#ddd" | Ga
| style="background:#ddd" | [[Germanium silicide|Si<sub>1−x</sub>Ge<sub>x</sub>]]  
| style="background:#99bbff" | '''SiAs'''
| style="background:#99bbff" | '''SiSe<sub>2</sub>'''
| style="background:#99bbff" | [[Tetrabromosilane|SiBr<sub>4</sub>]]  
| style="background:white" | Kr
|- <!-- ##### PERIODE 5 ##### -->
| style="background:#F0DC82" | '''RbSi''' 
| style="background:#F0DC82" | '''Sr<sub>2</sub>Si'''
|
| style="background:#98FF98" | '''YSi'''
| style="background:#98FF98" | '''ZrSi'''
| style="background:#98FF98" | '''Nb<sub>5</sub>Si<sub>3</sub>'''
| style="background:#98FF98" | '''Mo<sub>5</sub>Si<sub>3</sub>'''
| style="background:mistyrose" |Tc
| style="background:#98FF98" | '''RuSi'''
| style="background:#98FF98" | '''RhSi'''
| style="background:#98FF98" | '''PdSi'''
| style="background:#ddd" | Ag
| style="background:#ddd" | Cd
| style="background:#ddd" |In
| style="background:#ddd" | Sn
| style="background:#ddd" | Sb
| style="background:#99bbff" | '''TeSi<sub>2</sub>'''
| style="background:#99bbff" | [[silicon tetraiodide|SiI<sub>4</sub>]] 
| style="background:white" | Xe
|- <!-- ##### PERIODE 6 ##### -->
| style="background:#F0DC82" | '''CsSi''' 
| style="background:#F0DC82" | '''Ba<sub>2</sub>Si''' 
| style="background:white" | 
| style="background-color:#98FF98"|'''LuSi'''
| style="background:#98FF98" | '''HfSi'''
| style="background:#98FF98" | '''Ta<sub>5</sub>Si<sub>3</sub>'''
| style="background:#98FF98" | '''W<sub>5</sub>Si<sub>3</sub>'''
| style="background:#98FF98" |'''ReSi<sub>2</sub>'''
| style="background:#98FF98" | '''OsSi'''
| style="background:#98FF98" | '''IrSi'''
| style="background:#98FF98" | [[Platinum silicide|PtSi]]
| style="background:#ddd" | Au
| style="background:#ddd" | Hg
| style="background:#ddd" | Tl
| style="background:#ddd" |Pb
| style="background:#ddd" | Bi
| style="background:mistyrose" | Po
| style="background:mistyrose" | At
| style="background:white" | Rn
|-<!-- ##### PERIODE 7 ##### -->style="background-color:mistyrose"
| Fr
| style="background:mistyrose" | Ra
|  style="background:white" |
| style="background-color:mistyrose"|Lr
| Rf
| Db
| Sg
| Bh
| Hs
| Mt
| Ds
| Rg
| Cn
| style="background:mistyrose" | Nh
| style="background:mistyrose" | Fl
| style="background:mistyrose" | Mc
| style="background:mistyrose" | Lv
| style="background:mistyrose" | Ts
| style="background:white" | Og
|-
| colspan=3 style="border:none"|
| style="border:none"| ↓
| colspan=14 style="border:none"|
|- <!-- #### LANTHANIDES #### -->style="background-color:mistyrose"
| colspan=3 style="border:none; background-color:white"| 
| style="background-color:#98FF98"|'''LaSi'''
| style="background-color:#98FF98"|'''CeSi'''
| style="background-color:#98FF98"|'''PrSi'''
| style="background-color:#98FF98"|'''NdSi'''
| style="background-color:mistyrose"|Pm
| style="background-color:#98FF98"|'''SmSi'''
| style="background-color:#98FF98"|'''EuSi'''
| style="background-color:#98FF98"|'''GdSi'''
| style="background-color:#98FF98"|'''TbSi'''
| style="background-color:#98FF98"|'''DySi'''
| style="background-color:#98FF98"|'''HoSi'''
| style="background-color:#98FF98"|'''ErSi'''
| style="background-color:mistyrose"|Tm
| style="background-color:#98FF98"|'''YbSi'''
|- <!-- #### ACTINIDES #### --> style="background-color:mistyrose"
| colspan=3 style="border:none; background-color:white"|
| style="background-color:mistyrose"|Ac
| style="background-color:#98FF98"|'''ThSi '''
| style="background-color:mistyrose"|Pa
| style="background-color:#98FF98"|'''USi '''
| style="background-color:#98FF98"|'''NpSi'''
| style="background-color:#98FF98"|'''PuSi'''
| style="background-color:#98FF98"|'''AmSi'''
| style="background-color:#98FF98"|'''CmSi'''
| style="background-color:mistyrose"|Bk
| style="background-color:mistyrose"|Cf
| style="background-color:mistyrose"|Es
| style="background-color:mistyrose"|Fm
| style="background-color:mistyrose"|Md
| style="background-color:mistyrose"|No
| style="border:none; background-color:white"|
|}
{| border=2 cellpadding=4 style="margin-left:auto; margin-right:auto; text-align:center; background:silver; border:1px solid gray; border-collapse:collapse; width:50%; font-size:100%;"
|-
|+ '''Binary compounds of [[silicon]]'''
|-
| style="background:#99bbff" | Covalent silicon compounds
| style="background:#98FF98" | metallic silicides.

|-
| style="background:#F0DC82" | Ionic silicides
| style="background:white" | Do not exist
|-
| style="background:#ddd" | Eutectic / monotectic / solid solution
| style="background:mistyrose" | Unknown / Not assessed
|}

==References==
{{Reflist|2}}

{{silicon compounds}}
{{Chemical compounds by element}}


[[Category:Binary compounds]]
[[Category:Silicon compounds]]
[[Category:Chemical compounds by element|Silicon, binary compounds]]
{{Навигационная таблица/Портал/Английская Википедия}}
[[Категория:Английская Википедия]]
[[Категория:Википедия]]
[[Категория:Статья из Википедии]]
[[Категория:Статья из Английской Википедии]]