Английская Википедия:Boron carbide

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Boron carbide (chemical formula approximately B₄C) is an extremely hard boron–carbon ceramic, a covalent material used in tank armor, bulletproof vests, engine sabotage powders, as well as numerous industrial applications. With a Vickers hardness of >30 GPa, it is one of the hardest known materials, behind cubic boron nitride and diamond.

History

Boron carbide was discovered in the 19th century as a by-product of reactions involving metal borides, but its chemical formula was unknown. It was not until the 1930s that the chemical composition was estimated as B₄C. Controversy remained as to whether or not the material had this exact 4:1 stoichiometry, as, in practice the material is always slightly carbon-deficient with regard to this formula, and X-ray crystallography shows that its structure is highly complex, with a mixture of C-B-C chains and B₁₂ icosahedra.

These features argued against a very simple exact B₄C empirical formula. Because of the B₁₂ structural unit, the chemical formula of "ideal" boron carbide is often written not as B₄C, but as B₁₂C₃, and the carbon deficiency of boron carbide described in terms of a combination of the B₁₂C₃ and B₁₂CBC units.

Crystal structure

Файл:Borfig11a.png

Unit cell of B₄C. The green sphere and icosahedra consist of boron atoms, and black spheres are carbon atoms.

Файл:Borfig12a.png

Fragment of the B₄C crystal structure.

Boron carbide has a complex crystal structure typical of icosahedron-based borides. There, B₁₂ icosahedra form a rhombohedral lattice unit (space group: RШаблон:Overlinem (No. 166), lattice constants: a = 0.56 nm and c = 1.212 nm) surrounding a C-B-C chain that resides at the center of the unit cell, and both carbon atoms bridge the neighboring three icosahedra. This structure is layered: the B₁₂ icosahedra and bridging carbons form a network plane that spreads parallel to the c-plane and stacks along the c-axis. The lattice has two basic structure units – the B₁₂ icosahedron and the B₆ octahedron. Because of the small size of the B₆ octahedra, they cannot interconnect. Instead, they bond to the B₁₂ icosahedra in the neighboring layer, and this decreases bonding strength in the c-plane.

Because of the B₁₂ structural unit, the chemical formula of "ideal" boron carbide is often written not as B₄C, but as B₁₂C₃, and the carbon deficiency of boron carbide described in terms of a combination of the B₁₂C₃ and B₁₂C₂ units. Some studies indicate the possibility of incorporation of one or more carbon atoms into the boron icosahedra, giving rise to formulas such as (B₁₁C)CBC = B₄C at the carbon-heavy end of the stoichiometry, but formulas such as B₁₂(CBB) = B₁₄C at the boron-rich end. "Boron carbide" is thus not a single compound, but a family of compounds of different compositions. A common intermediate, which approximates a commonly found ratio of elements, is B₁₂(CBC) = B_6.5C. Quantum mechanical calculations have demonstrated that configurational disorder between boron and carbon atoms on the different positions in the crystal determines several of the materials properties – in particular, the crystal symmetry of the B₄C composition and the non-metallic electrical character of the B₁₃C₂ composition.

Properties

Boron carbide is known as a robust material having extremely high hardness (about 9.5 up to 9.75 on Mohs hardness scale), high cross section for absorption of neutrons (i.e. good shielding properties against neutrons), stability to ionizing radiation and most chemicals. Its Vickers hardness (38 GPa), elastic modulus (460 GPa) and fracture toughness (3.5 MPa·m^1/2) approach the corresponding values for diamond (1150 GPa and 5.3 MPa·m^1/2).

Шаблон:As of, boron carbide is the third hardest substance known, after diamond and cubic boron nitride, earning it the nickname "black diamond".

Semiconductor properties

Boron carbide is a semiconductor, with electronic properties dominated by hopping-type transport. The energy band gap depends on composition as well as the degree of order. The band gap is estimated at 2.09 eV, with multiple mid-bandgap states which complicate the photoluminescence spectrum. The material is typically p-type.

Preparation

Boron carbide was first synthesized by Henri Moissan in 1899, by reduction of boron trioxide either with carbon or magnesium in presence of carbon in an electric arc furnace. In the case of carbon, the reaction occurs at temperatures above the melting point of B₄C and is accompanied by liberation of large amount of carbon monoxide:

2 B₂O₃ + 7 C → B₄C + 6 CO

If magnesium is used, the reaction can be carried out in a graphite crucible, and the magnesium byproducts are removed by treatment with acid.

Файл:Plastic with boron carbide.jpg

Plastic embedded with boron carbide used as shielding in neutron experiments at the Atomic Energy Research Establishment, UK

Applications

Файл:Bodyarmor.jpg

Boron carbide is used for inner plates of ballistic vests

For its hardness :

• Padlocks
• Personal and vehicle anti-ballistic armor plating
• Grit blasting nozzles
• High-pressure water jet cutter nozzles
• Scratch and wear resistant coatings
• Cutting tools and dies
• Abrasives
• Metal matrix composites
• In brake linings of vehicles

For other properties :

• Neutron absorber in nuclear reactors (see below)
• High energy fuel for solid fuel ramjets

Nuclear applications

The ability of boron carbide to absorb neutrons without forming long-lived radionuclides makes it attractive as an absorbent for neutron radiation arising in nuclear power plants and from anti-personnel neutron bombs. Nuclear applications of boron carbide include shielding.

See also

• List of compounds with carbon number 1

Bibliography

• Шаблон:Cite book

External links

• National Pollutant Inventory – Boron and compounds
• NIST Chemistry Database Entry for Boron Carbide