Английская Википедия:EKV MOSFET model

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The EKV Mosfet model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation and analog circuit design.[1] It was developed by Christian C. Enz, François Krummenacher and Eric A. Vittoz (hence the initials EKV) around 1995 based in part on work they had done in the 1980s.[2] Unlike simpler models like the Quadratic Model, the EKV Model is accurate even when the MOSFET is operating in the subthreshold region (e.g. when Vbulk=Vsource then the MOSFET is subthreshold when Vgate-source < VThreshold). In addition, it models many of the specialized effects seen in submicrometre CMOS IC design.

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External links

it:MOSFET#Modello EKV