Английская Википедия:Guohan Hu

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Шаблон:Use mdy dates Шаблон:Use list-defined references Шаблон:Infobox person Guohan Hu is an electrical engineer specializing in magnetic storage and spintronics, and especially in the use of spin-transfer torque in magnetoresistive RAM, a type of non-volatile random-access memory.Шаблон:R She works for IBM Research at the Thomas J. Watson Research Center as a distinguished research staff member and manager of the MRAM Materials and Devices group.Шаблон:R

Hu has a Ph.D. from Cornell University, completed in 2002.Шаблон:R She was elected as an IEEE Fellow in 2022, "for contributions to Spin-Transfer-Torque MRAM materials and devices".Шаблон:R She was named a Fellow of the American Physical Society in 2023, "for pioneering advancements in the development of materials and devices for spin-transfer torque magnetic random access memory, resulting in breakthroughs that have significantly enhanced the performance, scalability, and reliability of next-generation non-volatile memory technologies".Шаблон:R

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