Английская Википедия:Indium arsenide antimonide phosphide

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Indium arsenide antimonide phosphide (Шаблон:Chem2) is a semiconductor material.

InAsSbP has been used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes and lasers,[1] photodetectors[2] and thermophotovoltaic cells.[3]

InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials.[4]

See also

References

Шаблон:Reflist

Шаблон:Indium compounds Шаблон:Arsenic compounds Шаблон:Arsenides Шаблон:Antimony compounds Шаблон:Phosphorus compounds Шаблон:Phosphides


Шаблон:CMP-stub