Английская Википедия:International Conference on Nitride Semiconductors

Материал из Онлайн справочника
Перейти к навигацииПерейти к поиску

Шаблон:Infobox Academic Conference

Файл:Wfm foster armadillo.jpg
The Scottish Exhibition and Conference Centre in Glasgow, venue for ICNS-9

The International Conference on Nitride Semiconductors (ICNS) is a major academic conference and exhibition in the field of group III nitride research. It has been held biennially since 1995. Since the second conference in 1997, hosting of the event has rotated between the Asian, European and North American continents. The ICNS and the International Workshop on Nitride Semiconductors (IWN) are held in alternating years, both covering similar subject areas.

ICNS-9 was held at the Scottish Exhibition and Conference Centre in Glasgow, Scotland, on 10–15 July 2011. Keynote speakers included Professor Umesh Mishra (University of California Santa Barbara and Transphorm) and Professor Hiroshi Amano (Meijo University, Nagoya). ICNS-10 was held in Washington, D.C., United States on 25–30 August 2013, ICNS-11 was held in Beijing, China 30 August–4 September 2015 and ICNS-12 was held in Strasbourg, France on 24–28 July 2017.

ICNS-13 was held 7-12 July 2019 in Seattle, Washington, United States, and was chaired by Alan Doolittle (Georgia Institute of Technology, USA)[1]

The ICNS-14 was held in Fukuoka, Japan, from 12-17 November 2023. [2] The conference had a total number of 1241 participants. 424 oral presentations were given and 407 posters presented. Plenary talks were given by Hiroshi Amano (Nagoya University, Japan), Debdeep Jena (Cornell University, USA), Elison Matioli (EPFL, Switzerland), Takashi Mukai (Nichia Corp, Japan), Åsa Haglund (Chalmers University of Technology, Sweden), Aurélien David (Google, USA), Ken Nakata (Sumitomo Electric Industries Ltd., Japan).

The ICNS-15[3] will be held in Malmö, Sweden from 6-11 July 2025. ICNS-15 will present high-impact scientific and technological advances in materials and devices based on group-III nitride semiconductors, and feature plenary sessions, parallel topical sessions, poster sessions and an industrial exhibition. ICNS-15 will celebrate the achievements of Profs. Bo Monemar and Tadek Suski as honorary chairs. Conference chairs are Vanya Darakchieva (Lund University), Piotr Perlin (Center for High Pressure Research at the Polish Academy of Sciences (Unipress), Warsaw, Poland) and Lars Samuelson (Lund University, Sweden and Southern University of Science and Technology (SUSTech), Shenzhen, China).

Conference list

Conference name Location Dates
ICNS-15[4] Шаблон:Flagicon Malmö, Sweden 6-11 July 2025
ICNS-14[5] Шаблон:Flagicon Fukuoka, Japan 12-17 November 2023
ICNS-13[6] Шаблон:Flagicon Bellevue, Washington, Seattle’s Eastside, United States 7–12 July 2019
ICNS-12[7] Шаблон:Flagicon Strasbourg, France 24–28 July 2017
ICNS-11[8] Шаблон:Flagicon Beijing, China 30 August – 4 September 2015
ICNS-10[9] Шаблон:Flagicon Washington D.C., United States 25–30 August 2013
ICNS-9[10] Шаблон:Flagicon Glasgow, UK 10–15 July 2011
ICNS-8[11] Шаблон:Flagicon Jeju, Korea 18–23 October 2009
ICNS-7[12][13] Шаблон:Flagicon Las Vegas, United States 16–21 September 2007
ICNS-6[14] Шаблон:Flagicon Bremen, Germany 28 August – 2 September 2005
ICNS-5[15] Шаблон:Flagicon Nara, Japan 25–30 May 2003
ICNS-4[16] Шаблон:Flagicon Denver, United States 16–20 July 2001
ICNS-3[17] Шаблон:Flagicon Montpellier, France 4–9 July 1999
ICNS-2[18] Шаблон:Flagicon Tokushima, Japan 27–31 October 1997
TWN'95[19] Шаблон:Flagicon Nagoya, Japan 21–23 September 1995


See also

References

Шаблон:Reflist

Партнерские ресурсы
Криптовалюты
Магазины
Хостинг
Разное

  1. ↑ Шаблон:Cite web
  2. ↑ Шаблон:Cite web
  3. ↑ Шаблон:Cite web
  4. ↑ Шаблон:Cite web
  5. ↑ Шаблон:Cite web
  6. ↑ Шаблон:Cite web
  7. ↑ Шаблон:Cite web
  8. ↑ G. Zhang, B. Shen, G. Zhang, T. Yu, N. Tang, X. Yang and S. Li (2016), "Preface: Nitride Semiconductors" Physica Status Solidi C 13 (5–6) 177–180 Шаблон:Doi
  9. ↑ J. A. Freitas, C. Wetzel, C. R. Eddy and A. Khan (2014), "Preface: Nitride Semiconductors" Physica Status Solidi C 11 (3–4) 370–372 Шаблон:Doi
  10. ↑ P. J. Parbrook, R. W. Martin and M. P. Halsall (2012) "Preface: Phys. Status Solidi C 3–4/2012" Physica Status Solidi C 9 (3–4) 430–432 Шаблон:Doi
  11. ↑ S.-J. Park (2010) "Preface: Phys. Status Solidi C 7/7-8" Physica Status Solidi C 7 (7-8) 1737–1742 Шаблон:Doi
  12. ↑ Шаблон:Cite web
  13. ↑ S. Nakamura, U. Mishra, S. DenBaars, J. S. Speck, M. Wraback, Y. Arakawa, A. Allerman, N. Grandjean, J. Shealy, M. Krames, T. Palacios and D. Jena (2008) "Preface: phys. stat. sol. (c) 5/6" Physica Status Solidi C 5 1472–1474 Шаблон:Doi
  14. ↑ Шаблон:Cite web
  15. ↑ H. Amano and T. Udagawa (2003) "Preface: phys. stat. sol. (c) 0/7" Physica Status Solidi C 0 1977 Шаблон:Doi
  16. ↑ Proceedings of 4th International Conference on Nitride Semiconductors (2002): Part A Physica Status Solidi A 188 (1–2); Part B Physica Status Solidi B 228 (1–2) Шаблон:ISBN
  17. ↑ Article title
  18. ↑ A. Mills (1998) "ICNS-2 charts GaN's progress" III-Vs Review 11 (1) 44–49 Шаблон:Doi
  19. ↑ Topical Workshop on III-V Nitrides
Источник — http://wikihandbk.com/ruwiki/index.php?title=Английская_Википедия:International_Conference_on_Nitride_Semiconductors&oldid=15425160