Английская Википедия:International Workshop on Nitride Semiconductors
Шаблон:Infobox Academic Conference
The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas. IWN is pioneered by Isamu Akasaki (Nagoya University, Meijo University) and Hiroshi Amano (Nagoya University), who are Nobel laureates in physics (2014)
- IWN2018 was held 11–16 November 2018 in Kanazawa, Japan, and chaired by Hiroshi Fujioka (the University of Tokyo, Japan)[1]
- IWN2016 was held 2–7 October 2016 in Orlando, United States, and jointly chaired by Alan Doolittle (Georgia Institute of Technology and Tomas Palacios (Massachusetts Institute of Technology, USA)[2]
- IWN2012 was held 14–19 October 2012 in Sapporo, Japan and chaired by Hiroshi Amano (Nagoya University, Japan).
Conference list
| Conference name | Location | Dates |
|---|---|---|
| IWN2022[3] | Шаблон:Flagicon Berlin, Germany | 9–14 October 2022 |
| IWN2018[4] | Шаблон:Flagicon Kanazawa, Japan | 11–16 November 2018 |
| IWN2016[5] | Шаблон:Flagicon Orland, United States | 2–8 October 2016 |
| IWN2014 | Шаблон:Flagicon Wrocław, Poland | 24–29 August 2014 |
| IWN2012[6] | Шаблон:Flagicon Sapporo, Japan | 14–19 October 2012 |
| IWN2010[7] | Шаблон:Flagicon Tampa, United States | 19–24 September 2010 |
| IWN2008[8][9] | Шаблон:Flagicon Montreux, Switzerland | 6–10 October 2008 |
| IWN2006[10] | Шаблон:Flagicon Kyoto, Japan | 22–27 October 2006 |
| IWN2004[11] | Шаблон:Flagicon Pittsburgh, USA | 19–23 July 2004 |
| IWN2002[12] | Шаблон:Flagicon Aachen, Germany | 22–25 July 2002 |
| IWN2000[13] | Шаблон:Flagicon Nagoya, Japan | 24–27 September 2000 |
See also
References
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ Шаблон:Cite web
- ↑ N. Grandjean, M. Ilegems, T. Suski and R. Butté (2009) "Preface: Phys. Status Solidi C 6/S2" Physica Status Ssolidi (c) 6 S289–S292 Шаблон:Doi
- ↑ K. Akimoto, S. Chichibu and T. Suemasu (2007) "Preface: phys. stat. sol. (c) 4/7" Physica Status Solidi C 4 2204–2208 Шаблон:Doi
- ↑ "Proceedings of the International Workshop on Nitride Semiconductors (IWN 2004)" Physica Status Solidi C 1 issue 13 Шаблон:ISBN
- ↑ A. Hoffmann and A. Rizzi (2003) "Editor's Preface: phys. stat. sol. (c) 0/1" Physica Status Solidi C 0 21 Шаблон:Doi
- ↑ "Proceedings of International Workshop on Nitride Semiconductors" Шаблон:ISBN
